Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1555283 | Superlattices and Microstructures | 2006 | 8 Pages |
Abstract
Up to now, many works have been dedicated to the study of the excitonic parameters of GaN by analyzing cw-spectroscopy results. In this work, time-resolved reflectivity experiments are carried out to record the impulse response of excitons at the femtosecond scale. By combining the analysis of continuous wave and time-resolved reflectivity spectra recorded on high quality GaN samples, the excitonic parameters are determined with accuracy. The oscillator strength evolutions of A, B and C free excitons are analysed versus the in-plane biaxial stress and compared with theoretical predictions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, E. Aujol, B. Beaumont, A. Trassoudaine, Y. André,