Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1555292 | Superlattices and Microstructures | 2006 | 13 Pages |
Abstract
The hole subband structure in double p-type δ-doped quantum wells in GaAs is computed with the use of the 4Ã4  kâ
p Hamiltonian. The Thomas-Fermi-Dirac approach is implemented for the description of the valence band bending, and the hole states at the Brillouin zone center are calculated along its lines, within the effective mass approximation. The zone center eigenstates obtained are then used to diagonalize the kâ
p Hamiltonian for non-zero k. The hole subband structure is analyzed as a function of the impurity density and the distance between δ wells.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Isaac RodrÃguez-Vargas, Miguel E. Mora-Ramos,