| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555303 | Superlattices and Microstructures | 2006 | 10 Pages |
Abstract
The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by a pulsed laser deposition (PLD) technique using a Nd:YAG laser. We have investigated the c-axis orientation and the electrical resistivity of the ZnO films. These results show the possibility of FBAR devices using PLD.
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Authors
Gun Hee Kim, Byung Du Ahn, Hong Seong Kang, Sung Hoon Lim, Sang Yeol Lee,