| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555319 | Superlattices and Microstructures | 2006 | 6 Pages |
Abstract
ZnO film growth on sapphire and zirconium boride single crystals by the molecular beam epitaxy method was investigated. A Zn metal film could not be grown on sapphire substrates at room temperature, while an incommensurate Zn film could be grown on a zirconium boride substrate. The incommensurate Zn film could be oxidized by molecular oxygen gas, and an epitaxial ZnO film was successfully grown at room temperature.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shunichi Hishita, Takashi Aizawa, Shigeki Otani, Shigeru Suehara, Hajime Haneda,