| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555321 | Superlattices and Microstructures | 2006 | 9 Pages |
Abstract
ZnO thin films were fabricated by pulsed laser deposition. ZnO thin films showed the various photoluminescence bands centered around ultraviolet (380 nm), green (490–530 nm), yellow (570–590 nm), and orange region (610–640 nm) depending on fabrication conditions or impurity doping with Si and P. Pure ZnO thin film showed ultraviolet emission and green emission and Si-doped ZnO exhibited ultraviolet and yellow emission, the intensity of which was controlled by an annealing process. Orange and yellow emission were controlled by P and Si diffusion into ZnO. Si doping and P doping were confirmed by Rutherford back scattering (RBS) and secondary ion mass spectrometry (SIMS). The mechanism of visible emission of ZnO was investigated.
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Authors
Hong Seong Kang, Jae Won Kim, Sung Hoon Lim, Hyun Woo Chang, Gun Hee Kim, Jong Hoon Kim, Sang Yeol Lee,