| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555770 | Journal of Materials Science & Technology | 2016 | 5 Pages |
The effect of Pt and Cu electrodes on the resistive switching properties and failure behaviors of amorphous ZrO2 films were investigated. Compared with Cu/ZrO2/Pt structures, the Pt/ZrO2/Pt structures exhibit better resistive switching properties such as the higher resistance ratio of OFF/ON states, the longer switching cycles and narrow distribution of OFF state resistance (Roff). The switching mechanism in the Pt/ZrO2/Pt structure can be attributed to the formation and rupture of oxygen vacancy filaments; while in the Cu/ZrO2/Pt structure, there exist both oxygen vacancy filaments and Cu filaments. The formation of Cu filaments is related to the redox reaction of Cu electrode under the applied voltage. The inhomogeneous dispersive injection of Cu ions results in the dispersive Roff and significant decrease of operate voltage. Schematic diagrams of the formation of conductive filaments and the failure mechanism in the Cu/ZrO2/Pt structures are also proposed.
