| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1557911 | Nano Energy | 2012 | 6 Pages |
Abstract
⺠ZnO/r-sapphire substrates were used for growing InGaN/GaN bilayer films by MOCVD. ⺠ZnO template was removed by lateral wet chemical etching to crack the bilayer film. ⺠The film cracks propagate along the c-axis of InGaN/GaN lying in the surface plane. ⺠InGaN/GaN-nanobelt arrays of large lengths and areas are fabricated by this method. ⺠Such nanobelts have great potentials for applications in piezotronics.
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Physical Sciences and Engineering
Energy
Energy (General)
Authors
H.F. Liu, W. Liu, S.J. Chua, D.Z. Chi,