| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1560262 | Computational Materials Science | 2015 | 6 Pages |
Abstract
- The tuning effects of electric field are related to both F values and inner Ge concentrations of Si1âxGex NWs.
- The incorporation of Ge atoms in the Si1âxGex NWs enriches the band variations.
- The electric field can induce robust and nonlinear tuning of optical properties of Si1âxGex NWs.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Yixi Zhang, Xi Zhang, Mu Lan, Xin Lai, Gang Xiang,