Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1560557 | Computational Materials Science | 2014 | 11 Pages |
Abstract
A theoretical study of structural, electronic, elastic and phonon properties of NaZnX (X = P, As and Sb) compounds is presented by performing ab initio calculations based on density-functional theory using the full-potential linear augmented plane wave (FP-LAPW) and pseudopotential plane wave method. The generalized-gradient approximation (GGA) and the local density approximation (LDA) are chosen for the exchange-correlation energy. The Engel-Vosko (EVGGA) formalism is applied for electronic properties. The calculated structural parameters, such as the lattice constant, bulk modulus, second-order elastic constants, the electronic band structures and the related total density of states and charge density are presented. The high-pressure α or β phase of all compounds is investigated and phase transition pressure from tetragonal to high-pressure phase is determined. We have found that the Nowotny-Juza compounds NaZnP and NaZnAs are direct gap semiconductor at ambient pressure. Our calculations predict that NaZnSb is a metal in all phases. The bonding character and the phase stability of NaZnX (X = P, As and Sb) compounds are discussed. The nature and the size of the band gap of NaZnX (X = P, As and Sb) compounds are associated with the bonding character of two kinds of bonds, namely, Na-X and Zn-X bonds. The elastic constants were derived from the stress-strain relation. Phonon-dispersion curves were obtained using the first principles linear-response approach of the density functional perturbation theory. The influence of the pressure and X atomic number on the electronic structure, structural properties and phonon properties are investigated.
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Authors
Z. Charifi, H. Baaziz, S. Noui, Å. UÄur, G. UÄur, A. İyigör, A. Candan, Y. Al-Douri,