Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1560955 | Computational Materials Science | 2014 | 10 Pages |
Abstract
We present a high-throughput computational method for exploring the optoelectronic properties of delafossite oxide materials of the form AB1-x1Bx2O2. The delafossite family of materials contains thousands of members when B-site alloying is considered. Using computational methods is an efficient way to predict delafossite properties and evaluate candidate materials for synthesis and further study. We apply this method to a prototypical delafossite, CuGa1âxFexO2, and explore the structural trends and electronic properties of this material. We describe in detail the steps that we take to generate and analyze hundreds of high-throughput calculations of very large supercells (432 atoms) and describe metrics that we devised to study these supercells. We present structural trends in the CuGa1âxFexO2 material as concentration of Fe increased from 0.00 < x < 0.05.
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Authors
Barry J. Haycock, M. Kylee Rice, James P. Lewis,