| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1561158 | Computational Materials Science | 2013 | 6 Pages |
Abstract
⺠Electronic structures and optical properties of Ce doping in GaN are calculated by first-principle method. ⺠The CeGa substitutional in GaN introduces a localized impurity band from Ce-4f in the bandgap. ⺠The incorporation of Ce impurity in GaN can lead to the magnetic order. ⺠The Ce dopants in GaN gives rise to new peaks in the low energy regions of dielectric function and absorption spectrum.
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Authors
Qianqian Li, Qiuyan Hao, Ying Li, Guodong Liu,