| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1561182 | Computational Materials Science | 2013 | 5 Pages |
Abstract
⺠We have calculated B-doped GeC at different doping concentrations. ⺠The electronic structures and optical properties are investigated. ⺠The incorporation of boron leads to a change from indirect gap to direct gap. ⺠The static dielectric constant of B-doped GeC is found to be remarkably large.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Xing-Sen Che, Zheng-Tang Liu, Yang-Ping Li, Ting-Ting Tan,