| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1561293 | Computational Materials Science | 2013 | 4 Pages |
Abstract
⺠GW band gap energy for α-Ge3N4 and γ-Ge3N4 are provided as a theoretical reference for future experimental work. ⺠γ-Ge3N4 can be a very promising short wavelength optoelectronic wide band gap semiconductor. ⺠DFT-LDA band gaps for Ge3N4 polymorphs as a function of lattice parameters are presented. ⺠γ-Ge3N4 can absorb light with longer wavelength comparing to β-Ge3N4.
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Authors
Shang-Peng Gao, Guanhua Cai, Yuan Xu,