Article ID Journal Published Year Pages File Type
1561330 Computational Materials Science 2013 4 Pages PDF
Abstract

The structural, electronic, magnetic and electrochemical properties of BiF3 with various concentration of Bi vacancy have been investigated by first principles calculations. The calculated Bi vacancy formation energy in BiF3 indicates that Bi vacancy is easier to fabricate under F-rich condition than under Bi-rich condition. Bi3F12 has non-polarized character, while Bi15F48 and Bi31F96 have polarized character. Magnetism in Bi1−xF3 mainly origins from the contribution of F 2p orbits. Besides, introducing Bi vacancy can also improve the conductive and electrochemical properties of BiF3.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Bi vacancy system can be easily fabricated under F-rich conditions. ► Bi vacancies can improve conductivity of BiF3. ► Bi vacancies can improve electrochemical properties of BiF3.

Related Topics
Physical Sciences and Engineering Engineering Computational Mechanics
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