| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1561366 | Computational Materials Science | 2013 | 4 Pages |
Abstract
⺠We analyzed the mechanical and electronic properties of the (4, 4) SiC/C nanotube heterojunction. ⺠The rearrangement of atoms at the interface does not significantly lower the mechanical strength of the heterojunction. ⺠The (4, 4) SiC/C nanotube heterojunction is a semiconductor with a direct band gap. ⺠The length of the CNT and SiCNT affects the electronic structure of the heterojunction. ⺠We estimated the band offset of the (4, 4) SiC/C heterojunction.
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Authors
B. Xu, J. Ouyang, Y. Xu, M.S. Wu, G. Liu, C.Y. Ouyang,