| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1561466 | Computational Materials Science | 2012 | 5 Pages |
Abstract
⺠We study the physical properties of passivated GeC nanowires within DFT. ⺠The band gaps of GeC and SiC nanowires are direct and very close between them. ⺠The Young's modulus of passivated nanowires follow this order: SiC > GeC > Si > Ge. ⺠The Poisson's ratio of non-carbide nanowires is larger than that of carbide nanowires.
Related Topics
Physical Sciences and Engineering
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Computational Mechanics
Authors
F. Salazar, Luis A. Pérez,