| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1561566 | Computational Materials Science | 2012 | 7 Pages |
Abstract
⺠The doping of Be atom at interstitial positions of ZnO is energetically favorable. ⺠Interstitial Be atoms would decrease the band gap of ZnO. ⺠Changes of band gap are due to the increase of covalent and metallic bonding. ⺠The present results could clarify the controversies of ZnBeO in the literature.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
F.T. Kong, H.R. Gong,