Article ID Journal Published Year Pages File Type
1561626 Computational Materials Science 2012 5 Pages PDF
Abstract
► We study the deposition of Cu clusters on a Si surface with molecular dynamics. ► We integrate EAM, SW and LJ potentials to describe the interaction. ► Within a window, the degree of epitaxy increases with the deposition velocity. ► We identify the relation between degree of epitaxy and cluster size.
Keywords
Related Topics
Physical Sciences and Engineering Engineering Computational Mechanics
Preview
The effect of deposition velocity and cluster size on thin film growth by Cu cluster deposition
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