Grain-scale growth simulation of SiC film with the Chemical Vapor Deposition method

Grain-scale growth of SiC film prepared by the Chemical Vapor Deposition method is simulated with finite difference method in two-dimensional scale. The morphology and crystallographic texture of SiC film, such as evolution of grain size, surface roughness, grain boundary evolution and contribution of various crystal planes, are analyzed with growth-rate parameter. The results show that the deposition temperature affects growth-rate parameter. With the increase of SiC thickness, SiC grain becomes thicker and bigger. Surface of SiC film becomes more and more rough. When the value of growth-rate parameter is 1.95, the surface of SiC film seems to be a “flat roof shape”. SiC crystal is mainly composed of {1 1 1} plane, {1 1 0} plane and {1 0 0} plane. 〈1 1 0〉 orientation is preferential orientation. When the value of growth-rate parameter is 6.28, the surface of SiC film seems to be a “sharp roof shape”. SiC crystal is totally composed of {1 1 1} plane. 〈1 0 0〉 orientation is preferential orientation. Those preferential orientations are mainly controlled by crystal structure.

► Grain-scale growth of CVD-SiC film is simulated with finite difference method. ► Deposition temperature affects growth-rate parameter. ► Growth-rate parameter controls preferential orientations of SiC film. ► Preferential orientation decides crystallographic texture. ► The simulation results play an important role on preparation of SiC film.