Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1561980 | Computational Materials Science | 2012 | 5 Pages |
Abstract
⺠Electronic and optical properties of h-BN under the uniaxial strain. ⺠AA stacking shows the indirect-direct transition at 6.55 GPa. ⺠Band-edge absorption threshold of AA, AD, AE and AF shows red shifts. ⺠Band-edge absorption threshold of AB red shifts initially and then blue shift.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
M.L. Hu, Zhizhou Yu, J.L. Yin, C.X. Zhang, L.Z. Sun,