| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1562187 | Computational Materials Science | 2011 | 9 Pages |
Abstract
⺠We established and analyzed three models of 3-dimensional atomic scale CVD-SiC film. ⺠The results show that different process parameters would result in different tendencies. ⺠The simulation results may play a guiding role in the experiment for preparing the CVD-SiC films.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Cuixia Liu, Yanqing Yang, Xian Luo,