| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1562338 | Computational Materials Science | 2011 | 8 Pages |
Abstract
The semi-metal 2D Ge can change to either FM or AFM metals after 3d TM adsorption. TM atom at edge hexagon hollow site yields the minimum energy state. 3d TM-adsorbed AGeNRs can be either metals or semiconductors with FM or AFM alignment. The Cr and Mn adsorptions make certain AGeNRs to be half-metals. The robust half-metallic state of Cr adsorbed AGeNRs can be used in spintronic devices.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Qing Pang, Yan Zhang, Jian-Min Zhang, Ke-Wei Xu,