Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1562351 | Computational Materials Science | 2011 | 7 Pages |
Abstract
Voids <2Â nm: discussion of the trailing partial dominated void detachment (Fig. 4). Voids >2Â nm: discussion of both partials dominated void detachment. Comparison with literature for the explanation of these mechanisms. Detachment angle independent of dynamic effects. Expression to obtain static stress from dynamic stress (Fig. 8).
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Aude Simar, Hyon-Jee Lee Voigt, Brian D. Wirth,