Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1563050 | Computational Materials Science | 2009 | 4 Pages |
Abstract
The condensation of Si, Ge, and Si/Ge nanoclusters in an Ar atmosphere was simulated using molecular dynamics simulations. The clusters formed were made with different Si-to-Ge ratios ranging from 100% Si to 100% Ge. The results indicate that Ge atoms have a tendency to segregate to the surface of the clusters, although the magnitude of this effect depends on the potential used for the simulations. Also, there is a random tendency for the atoms to form non-spherical clusters; this tendency grows with the increased concentration of Ge atoms.
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Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Ari Harjunmaa, Kai Nordlund,