Article ID Journal Published Year Pages File Type
1563311 Computational Materials Science 2008 6 Pages PDF
Abstract
Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and an electron mobility decrease of −5% have been demonstrated with the application of a 0.05% compressive 〈1 1 0〉 strain; a hole mobility enhancement of +2% and an electron mobility decrease of −3% have been induced into the material with the application of a 0.05% compressive 〈1 0 0〉 strain.
Related Topics
Physical Sciences and Engineering Engineering Computational Mechanics
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