Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1563311 | Computational Materials Science | 2008 | 6 Pages |
Abstract
Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and an electron mobility decrease of â5% have been demonstrated with the application of a 0.05% compressive ã1Â 1Â 0ã strain; a hole mobility enhancement of +2% and an electron mobility decrease of â3% have been induced into the material with the application of a 0.05% compressive ã1Â 0Â 0ã strain.
Related Topics
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Computational Mechanics
Authors
D. Cordano, G. Carnevale, M. Bocciarelli,