| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1563556 | Computational Materials Science | 2009 | 4 Pages |
Abstract
Electromigration is an important mechanism of deformation and failure in miniaturized electronics materials. In this paper, a 2-D mesoscopic simulation method is developed for analyzing electromigration-induced stress in thin films and finite element method is implemented for solution. Numerical simulations are compared with theoretical result and comparisons validate the model. The method has advantage in describing boundary conditions for constrained diffusion when focusing on creep process of thin films.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Ya-Xiong Zheng, Li-Sha Niu,