Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1564083 | Computational Materials Science | 2006 | 5 Pages |
Abstract
Molecular dynamics (MD) simulations have been performed to investigate velocity distribution of atoms and local temperature changes during rapid cooling processes in excimer-laser annealed Si. The interatomic forces were calculated using the Tersoff potential, and the rapid cooling processes were simulated by determining the atomic movements with a combination of Langevin and Newton equations using a MD cell with the size of 48.9Â ÃÂ 48.9Â ÃÂ 97.8Â Ã
3. The local velocity distribution during rapid cooling processes was found to be the Maxwell-Boltzmann type, and the steady-state temperature distribution was obtained within 100Â ps.
Related Topics
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Engineering
Computational Mechanics
Authors
Byoung Min Lee, Shinji Munetoh, Teruaki Motooka,