| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1564521 | Computational Materials Science | 2006 | 4 Pages |
Abstract
A full-potential linearized augmented-plane-wave (FLAPW) method is used for the investigation of the electronic structure of a series group III-V semiconductors. The electronic structure of low-index clean GaAs surfaces and with thin overlayers of cesium is studied. We analyze Cs(O) coadsorption on the GaAs(0Â 0Â 1) surface as well as the influence of Sb on its electron and adsorption properties.
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Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
S.E. Kulkova, D.V. Khanin, A.V. Subashiev,