| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1570455 | Journal of Radiation Research and Applied Sciences | 2015 | 6 Pages |
Abstract
In1-x MnxSe thin films prepared by thermal evaporation technique. The effect of γ-irradiation on the optical and the electrical properties were studied. The optical parameters were calculated from the transmittance and reflectance. The absorption coefficient decreased with increasing the γ-irradiation doses. The direct allowed band gap increased as the γ-irradiation doses increased. As the γ-irradiation increased the electrical conductivity and the activation energy decreased.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
S.A. Gad,