Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1571726 | Materials Characterization | 2010 | 5 Pages |
Abstract
Large-scale GaN nanowires were successfully synthesized through ammoniating Ga2O3/Pd films sputtered on the sapphire(001) substrates. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence and Raman spectrum were used to characterize the specimens. The results demonstrate that nanowires are single crystal with hexagonal wurtzite structure and have good optical properties. Raman scattering appears broadened and asymmetric compared with those of bulk GaN due to its polycrystalline nature. In addition, the growth mechanism of GaN nanowires is briefly discussed.
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Materials Science
Materials Science (General)
Authors
Y.F. Guo, C.S. Xue, W.J. Liu, H.B. Sun, Y.P. Cao,