Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1574330 | Materials Science and Engineering: A | 2015 | 6 Pages |
Abstract
The dynamics of SiC grain boundaries under shear are characterized using molecular dynamics simulations. At low-temperatures, low-angle grain boundaries exhibit stick-slip behavior due to athermal climb of edge dislocations along the grain boundary. With increasing temperature stick-slip becomes less pronounced due to dislocation glide, and at high-temperatures, structural disordering of the low-angle grain boundary inhibits stick-slip. In contrast, structural disordering of the high-angle grain boundary is induced under shear even at low temperatures, resulting in a significantly dampened stick-slip behavior.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Stefan Bringuier, Venkateswara Rao Manga, Keith Runge, Pierre Deymier, Krishna Muralidharan,