Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1576940 | Materials Science and Engineering: A | 2012 | 6 Pages |
Abstract
Porous α-SiC ceramics with distributed pore structure were prepared by recrystallization method using silicon as the template. The microstructure evolution of this material (sintered at 2100 °C) was investigated by varying particle size of the silicon powders (3.5 μm and 37 μm). The results demonstrated that finer silicon powder could strengthen grain growth along close-packed directions and made the material easily to form plate-like SiC crystals. Pore diameter was mainly controlled by silicon raw powder when the silicon had a greater median diameter value than the SiC powder. In this study, grain growth was determined by a mixed mechanism during silicon removing. The porosity increased with the increasing of silicon contents while the strength was in a reverse proportional relationship. High porosity ceramics with relative high strength, which were sintered at 2100 °C for 15 min, were obtained using 3.5 μm silicon powder as the template.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Rongzhen Liu, Guiwu Liu, Jianfeng Yang, Haiyun Jin, Yuan Lu, Wenwei Gu,