Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.

Research highlights▶ Strain is introduced by deposition of amorphous SixNy to improve the carrier mobility for a relatively large-size freestanding semiconductor film, which can be used for the fabrication of relatively large devices such like a bipolar junction transistor. However, standard Raman spectroscopy and X-ray diffraction cannot provide sufficient lateral resolution to the strain in a relatively long (x μm in length) and thin (x nm in thickness) freestanding semiconductor film. ▶ In present research, strain in a bridge-shaped freestanding Si membrane (FSSM) was measured by convergent-beam electron diffraction (CBED) and finite element method (FEM). Compressive strain distribution was shown in three dimensions (3D) in FSSM, where no threading dislocation or stacking fault was found. Relaxation of the strain in FSSM in 3D was discussed based on a comparison of the strain magnitudes in FSSM as measured by CBED and FEM.