Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1583423 | Materials Science and Engineering: A | 2007 | 4 Pages |
Abstract
In the present work Czochralski-grown silicon single crystals were investigated implanted with different doses of H+ ions. The Si wafers were characterized by the Raman scattering technique. Thermoelectric power was studied in a pressure range of 0-20 GPa of p-type Si single crystal wafers containing a thin hydrogenated layer consisting of amorphous Si, nanocrystalline Si and H-rich Si layers. In the region of the pressure-induced phase transition from the initial semiconductor diamond-like into the metal β-Sn lattice, a lowering of thermopower values was noticed in comparison with ones of p-Si.
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Authors
Sergey V. Ovsyannikov, Vladimir V. Shchennikov, Irina V. Antonova, Vsevolod V. Jr., Yuri S. Ponosov,