Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1583868 | Materials Science and Engineering: A | 2007 | 6 Pages |
Abstract
Kinetics of molybdenum disilicide (MoSi2) layer transformation into Mo5Si3 one was studied at isothermal annealing of the MoSi2/Mo diffusion couple within the temperature interval 1200–1800 °C. It was revealed that the growth of intermediate silicide layer followed a parabolic law and did not accompanied by formation of the lowest Mo3Si silicide. By analyzing the diffusion problem solid-phase diffusion coefficient of silicon in the Mo5Si3 layer was calculated.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
H.A. Chatilyan, S.L. Kharatyan, A.B. Harutyunyan,