Electrical anomaly in 2SrTiO3-SiO2 glass

We report the electrical properties of 2SrTiO3-SiO2 glass in the frequency range 100 ≤ f ≤ 107 Hz from 30 °C to near 600 °C. We have found that the anomalous dielectric constant decreases with the increase of annealing cycle and the heat-treated sample under oxygen atmosphere. The non-Debye behavior in the complex permittivity Cole-Cole formula has been used to interpret the relaxation mechanism of a dielectric anomaly. The activation energy for the relaxation process related to oxygen vacancies is in the range of 0.5-0.6 eV. The values of α are 0.76-0.84 for the sample of the various heat-treatment conditions. We have explained that the dielectric relaxation originates from the hopping of ions and local arrangement in this system.