| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1583967 | Materials Science and Engineering: A | 2007 | 4 Pages |
Abstract
A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Choong-Soo Chi, Yongsoo Jeong, Hong-Joo Ahn, Jong-Ho Lee, Jung-Gu Kim, Jun-Hee Lee, Kyung-Wook Jang, Han-Jun Oh,