Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1584662 | Materials Science and Engineering: A | 2006 | 5 Pages |
Abstract
The thermal desorption spectra between 400 and 1100Â K and the internal friction spectra between 80 and 423Â K were studied for a-Si(H). The thermal desorption of hydrogen was observed around 650Â K (TDH650Â K) and around 900Â K (TDH900Â K,L and TDH900Â K,H). Both TDH900Â K,L and TDH900Â K,H with the activation energy of 1.6Â eV were attributed to the desorption of bonded hydrogen. TDH650Â K was not a diffusion controlled process with the activation energy of 1.0Â eV, where one part of TDH650Â K was attributed to the desorption of isolated hydrogen molecules. The hydrogen-induced internal friction, H-Qa-Si(H)â1, was observed between 80 and 423Â K. Hydrogen responsible for H-Qa-Si(H)â1 showed the thermal desorption around 650Â K (TDH650Â K), indicating that isolated hydrogen molecules in the amorphous structure may be responsible for H-Qa-Si(H)â1. Light soaking caused changes in H-Qa-Si(H)â1 in the temperature ranges between 80 and 200Â K and between 200 and 300Â K, indicating that light soaking modified the local amorphous structures responsible for these changes in Qa-Si(H)â1.
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Authors
T. Hinuma, H. Kasai, H. Tanimoto, M. Yamanaka, I. Sakata, H. Mizubayashi,