| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1586077 | Materials Science and Engineering: A | 2006 | 5 Pages |
The annealing behavior in Zr702 processed by equal channel angular pressing (ECAP) was investigated. ECAP was carried out at room temperature with the sample rotated 90 ° in the same sense in each pass. The annealing of ECAP’ed Zr702 was performed at the temperature of above recrystallization. The four passes developed deformation twins and a high dislocation density in grains exhibits. Full recrystallization occurred with annealing at 873 K for 10 min with a recrystallized grain size of ∼ 3 μm. The kinetics of grain growth of ECAP’ed Zr702 was analyzed by the non-ideal grain growth law. The grain growth exponents of Zr702 at temperatures of 873, 973 and 1073 K were 0.12, 0.24 and 0.24, respectively. The activation energy for grain growth was 134 kJ mol−1.
