| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1588842 | Micron | 2014 | 9 Pages |
Abstract
A simple model is proposed to take into account secondary X-ray fluorescence and absorption effects near the interface. This model is based on the investigation of the shape change of the first derivative equation that can fit the sigmoidal EDS profile obtained when a high vacuum electron beam passes through the interface of two adjacent materials. The contribution of the photoelectric absorption of primary X-rays (characteristic and Bremsstrahlung) and the secondary fluorescence on the degradation of the X-ray spatial resolution can be easily quantified. The close agreement between the simulated (Monte Carlo simulation using the Casino software) and the experimental data serves to assess the reliability of this developed model.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
A. Zoukel, L. Khouchaf,