| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1589122 | Micron | 2013 | 7 Pages |
Abstract
A new STEM XEDS tomography technique is proposed thanks to the implementation of multi EDX SDD detectors in analytical TEMs. The technique flow is presented and the first results obtained on a 28 nm FDSOI transistor are detailed. The latter are compared with 2D XEDS analysis to demonstrate the interest of the slice extraction in all directions from a large analyzed volume without any 3D overlap effect issues.
► A new STEM XEDS tomography technique thanks to the implementation of multi EDX SDD detectors. ► Technique method and workflow description. ► Analyze of overlap effect: comparison with 2D analysis. ► 3D chemical visualization of a 28 nm FDSOI transistor.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
K. Lepinay, F. Lorut, R. Pantel, T. Epicier,