Measurement of crystal thickness and orientation from selected-area Fourier transformation of a high-resolution electron hologram

Precise knowledge of crystal thickness and orientation is critical for reliable interpretation of high-resolution transmission electron micrographs. In this paper, we propose a criterion of S2(T, u, v), which measures the crystal thickness by intensity matching of the selected-area Fourier transform of experimental holograms with the calculated electron diffraction pattern at a series of trial thicknesses (T) and crystal tilts (u, v). This criterion has been demonstrated successfully for local thickness determination from a simulated high-resolution image of a wedge-shaped YBa2Cu3O7−δ and from an experimental hologram of a Si crystal.