Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1590799 | Science and Technology of Advanced Materials | 2007 | 4 Pages |
Abstract
Selective epitaxial Si with a high arsenic concentration of 2.2Ã1019Â atoms/cm3 was deposited at a high growth rate of 3.3Â nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake,