Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1590828 | Science and Technology of Advanced Materials | 2006 | 11 Pages |
Abstract
In this article we review our recent theoretical studies on the carrier induced ferromagnetism of DMS. We propose a minimal model, which is composed of a single tight-binding band of carriers and magnetic impurities, which randomly substitute the host sites. Both of nonmagnetic attractive potentials due to impurities and the exchange interactions between carrier and impurity spins are taken into account. We apply the coherent potential approximation in studying this system. The obtained phase diagrams illustrate the characteristic features of the carrier induced ferromagnetism in DMS. The role of nonmagnetic interaction for the enhancement of the Curie temperature is clarified. The results suggest that the ferromagnetism in Ga1âxMnxAs is caused by a double-exchange-like mechanism mediated by valence band holes. We also report the results of numerical simulations of the model.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Kazushi Kagami, Masao Takahashi, Chitoshi Yasuda, Kenn Kubo,