Article ID Journal Published Year Pages File Type
1590932 Science and Technology of Advanced Materials 2006 5 Pages PDF
Abstract
We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150×nmeV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.
Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
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