| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1590934 | Science and Technology of Advanced Materials | 2006 | 4 Pages |
Abstract
We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of synthetic polycrystalline boron-doped diamond in the temperature range 0.5-4.3Â K. At 4.3Â K the sample-surface was very non-uniform and tunneling I(V) spectra were typical for p-type semiconductors. After cooling below the superconducting transition temperature, we detected and measured the superconducting gap of diamonds. At temperatures around 0.5Â K the energy gap was around 0.8 and 1Â mV (for two different samples).
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Alexey Troyanovskiy, Terukazu Nishizaki, Evgeniy Ekimov,