Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1591050 | Solid State Communications | 2016 | 6 Pages |
•Processes associated with inelastic light scattering in Si/SiGe nanostructures are reviewed.•Raman analysis of strain and chemical composition in Si/SiGe nanostructures is presented.•Si/SiGe nanostructure thermal properties are studied using Raman scattering.•Polarized Raman scattering is used in detecting strain in Si/SiGe nanostructures.
We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.