Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1591160 | Solid State Communications | 2016 | 4 Pages |
Abstract
We have studied electron-electron (e-e) interactions in multilayer graphene grown on SiC(0001). We find that the observed logarithmic temperature (ln T) dependence of the Hall slope is a good physical quantity for probing e-e interactions since it is not affected by electron-phonon scattering at high temperatures. By subtracting the weak localization correction term, we are able to study e-e interactions independently. It is found that the interaction correction terms determined by two methods, which both show ln T dependences, agree better with each other in the high-temperature regime. Our approach is applicable to other two-dimensional materials which do not have buckled structures.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Chieh-I Liu, Pengjie Wang, Jian Mi, Hsin-Yen Lee, Yi-Ting Wang, Yi-Fan Ho, Chi Zhang, Xi Lin, Randolph E. Elmquist, Chi-Te Liang,