Article ID Journal Published Year Pages File Type
1591160 Solid State Communications 2016 4 Pages PDF
Abstract
We have studied electron-electron (e-e) interactions in multilayer graphene grown on SiC(0001). We find that the observed logarithmic temperature (ln T) dependence of the Hall slope is a good physical quantity for probing e-e interactions since it is not affected by electron-phonon scattering at high temperatures. By subtracting the weak localization correction term, we are able to study e-e interactions independently. It is found that the interaction correction terms determined by two methods, which both show ln T dependences, agree better with each other in the high-temperature regime. Our approach is applicable to other two-dimensional materials which do not have buckled structures.
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Physical Sciences and Engineering Materials Science Materials Science (General)
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