| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1591295 | Solid State Communications | 2016 | 4 Pages |
Abstract
The influence of the temperature has been studied in self-assembled InAlAs/GaAlAs quantum dots (QDs) using photoluminescence (PL) and time-resolved PL (TRPL). With increasing temperature, the exciton retrapping in QDs, after a thermal activation, is evidenced and confirmed by a narrowing of the PL spectrum width, and an increase of the PL decay time. From the temperature dependence of the integrate PL signal, the activation energy is estimated at 110Â meV, in agreement with the electronic state in QD and wetting layer (WL) determinate by PL spectroscopy measurements. The influence of the QD size on the QD confinement energy, is also observed in the evolution of the decay time with temperature and detection energy.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
A. Ben Daly, F. Bernardot, T. Barisien, A. Lemaître, M.A. Maaref, C. Testelin,