Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1591555 | Solid State Communications | 2015 | 6 Pages |
Abstract
Polycrystalline BiFeO3 thin films were grown on La0.5Sr0.5CoO3 buffered Pt (200)/TiO2/SiO2/Si substrates under different oxygen partial pressures (10, 25, 50 and 100Â mTorr) by pulsed laser ablation. Piezoresponse Force Microscopy and Piezo-Force Spectroscopy have shown that all the films are ferroelectric in nature with locally switchable domains. It has also revealed a preferential downward domain orientation in as-grown films grown under lower oxygen partial pressure (10 and 25Â mTorr) with a reversal of preferential domain orientation as the oxygen partial pressure is increased to 100Â mTorr during laser ablation. Such phenomena are atypical of multi-grained polycrystalline ferroelectric films and have been discussed on the basis of defect formation with changing growth conditions. For the 50Â mTorr grown film, asymmetric domain stability and retention during write-read studies has been observed which is attributed to grain-size-related defect concentration, affecting pinning centres that inhibit domain wall motion.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Palash Roy Choudhury, Jayanta Parui, Santosh Chiniwar, S.B. Krupanidhi,